Product Summary

The SI4425BDYT1E3 is a P-Channel 30-V (D-S) MOSFET.

Parametrics

SI4425BDYT1E3 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current (TJ = 150℃): -11.4 A at TA = 25℃, -9.1 A at TA = 70℃; (4)Pulsed Drain Current: -50 A; (5)continuous Source Current (Diode Conduction): -2.1 A; (6)Maximum Power Dissipation: 2.5 W at TA = 25℃, 1.6 W at TA = 70℃; (7)Operating Junction and Storage Temperature Range: -55 to 150 ℃.

Features

SI4425BDYT1E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.

Diagrams

Si4401BDY
Si4401BDY
Other

Data Sheet
Negotiable 
SI4401BDY-T1-E3
SI4401BDY-T1-E3
Vishay/Siliconix
MOSFET 40V 10.5A 0.014Ohm
Data Sheet
0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4401BDY-T1-GE3
SI4401BDY-T1-GE3
Vishay/Siliconix
MOSFET 40V 10.5A 2.9W 14mohm @ 10V
Data Sheet
0-1: $1.06
1-10: $0.84
10-50: $0.80
50-100: $0.76
SI4401DDY-T1-GE3
SI4401DDY-T1-GE3
Vishay/Siliconix
MOSFET 40V 16.1A P-CH MOSFET
Data Sheet
0-1: $0.58
1-25: $0.44
25-100: $0.39
100-250: $0.34
SI4401DY
SI4401DY
Vishay/Siliconix
MOSFET 40V 10.5A 3W
Data Sheet
Negotiable 
SI4401DY-E3
SI4401DY-E3
Vishay/Siliconix
MOSFET 40V 10.5A 3W
Data Sheet
Negotiable