MGP11N60ED

bipolar transistor, 11A, 600V, TO

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Price:: US $2.43~3.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
100 ~ 500 :	3.00 / Piece
500 ~ 1000 :	2.70 / Piece
1000 ~ 5000 :	2.43 / Piece

PartNumber:: MGP11N60ED

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 10+

Availability:: Supply Ability: 5000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-02-01

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Part Number:MGP11N60ED
US $2.43 - 3.00
Quantity:

piece

Product Summary

The MGP11N60ED Insulated Gate Bipolar Transistor (IGBT) is co-package with a soft recovery ultra¤Cfast rectifier and uses an advance ermination scheme to provide an enhanced and reliable high voltage-blocking capability. The new 600 V IGBT technologgy of the MGP11N60ED is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE( on) . The MGP11N60ED provides fast switching characteristics and results in efficient operation at high frequencies.

Parametrics

MGP11N60ED absolute maximum ratings: (1) Collector-Emitter Voltage VCES: 600V; (2) Collector-Gate Voltage ( RGE=1.0MΩ) VCGR: 600V; (3) Gate-Emitter Voltage -Continuous VGE: ±20V; (4) Collector Current-Continuos@Tc=25°C, IC25: 15A, Current-Continuos@Tc=90°C IC90: 11A; (5) Total Power Dissipation@TC=25°C, PD: 96W, Derate above 25°C: 0.77W/°C; (6) Operating and Storage Junction Temperature Range: -55 to +150°C; (7) Short Circuit Withstand Time (VCC=400Vdc, VGE=15 Vdc, TJ=125°C, RG=20Ω) , tsc: 10μs; (8) Thermal Resistance, Junction to Case-IGBT, RθJC: 1.3°C/W, Junction to Case-Diode, RθJC:2.3°C/W , Junction to Ambient RθJC: 6.5°C/W; (9) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds TL: 260°C.

Features

MGP11N60ED features: (1) Industry Standard TO-220 Package; (2) High Speed: Eoff=60μJ per Amp typical at 125°C; (3) High Voltage Short Circuit Capability-10μs minimum at 125°C, 400V; (4) Low On-Voltage: 2.0 V typical at 8.0A; (5) Soft Recovery Free Wheeling Diode is included in the Package; (6) Robust High Voltage Termination; (7) ESD Protection Gate¤CEmitter Zener Diode.