Product Summary

The IXFK26N120P is a power mosfet. Applications of the IXFK26N120P include: High Voltage Switched-mode and resonant-modepower supplies, High Voltage Pulse Power Applications, High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators, High Voltage DC-DC converters and High Voltage DC-AC inverters.

Parametrics

IXFK26N120P absolute maximum ratings: (1) Tj=25°C to 150°C, VDDS: 1200V; (2) Tj=25°C to 150°C, RGS=1MΩ VDGR: 1200V; (3) Continuous VGSS: ±30V, Transient VGSM: ±40V; (4) Tc=25°C, ID25: 26A, Tc=25°C, pulse width limited by TJM, IDM: 60A; (5) Tc=25°C, IA: 13A, Tc=25°C, EAS: 1.5J; (6) Is≤IDM, VDD≤VDSS, Tj≤150°C, dv/dt: 15V/ns; (7) Tc=25°C, PD: 960W; (8) Tj: -55 to +150°C, TJM: 150°C, Tstg: -55 to +150°C; (9) 1.6 mm (0.062 in.) from case for 10s, Tl: 300°C; (10) Plastic body for 10s TSOLD: 260°C; (11) Mounting torque (IXFK) Md: 1.13/10 Nm/lb.in.

Features

IXFK26N120P features: (1) Fast intrinsic diode; (2) International standard packages; (3) Unclamped Inductive Switching (UIS) rated; (4) Low package inductance: easy to drive and to protect.

Diagrams

IXFK26N120P Dimension

Image Part No Mfg Description Data Sheet Download Pricing
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IXFK26N120P
IXFK26N120P

Ixys

MOSFET 26 Amps 1200V

Data Sheet

Negotiable 
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IXFK 120N25
IXFK 120N25

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IXFK 25N80

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IXFK 27N80

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IXFK100N10

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Data Sheet

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