IRG4PC50UD

insulated gate bipolar transistor, TO-247, ultrafast soft recovery diode

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Price:: US $2.50~2.70 / piece [Get Latest Price]

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	US $2.50~2.70

PartNumber:: IRG4PC50UD

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-03-31

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Part Number:IRG4PC50UD
US $2.50 - 2.70
YL-G709

US $65.00 - 68.00 / Piece
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Product Summary

The IRG4PC50UD is insulated gate bipolar transistor with ultrafast soft recovery diode. It is generation 4 IGBT which offers highest efficiencies. This IGBT is able to optimize for specific application conditions. What is more, HEXFRED diodes optimized for performance with IGBT. It is featured with minimized recovery characteristics require less/no snubbing. Lastly, it is designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBT.

Parametrics

Absolute maximum ratings:(1)Collector-to-Emitter Voltage, VCES: 600V; (2)Continuous Collector Current, IC at TC = 25℃: 55A; (3)Continuous Collector Current: 27A; (4)ICM Pulsed Collector Current, IC at TC = 100℃: 220A; (5)Clamped Inductive Load Current, ILM: 220A; (6)Diode Continuous Forward Current, IF at TC = 100℃: 25A; (7)Diode Maximum Forward Current, IFM: 220A; (8)Gate-to-Emitter Voltage, VGE: ±20V; (9)Maximum Power Dissipation, PD at TC = 25℃: 200A; (10)Maximum Power Dissipation, PD at TC = 100℃: 78; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case); (13)Mounting Torque, 6-32 or M3 Screw: 10 lbf.in (1.1 N.m).

Features

Features: (1)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package.