Product Summary

The MG150J1BS11 is a TOSHIBA GTR Module. It is a High Power Switching Application.

Parametrics

MG150J1BS11 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600V; (2)Gate-emitter voltage VGES: ±20V; (3)Collector Current IC: 150A; (4)Collector power dissipation PC: 450W; (5)Junction temperature Tj: 150℃; (6)Storage temperature TSTG: -40℃ to +125℃; (7)Isolation Voltage VIsol: 2500V(AC 1min).

Features

MG150J1BS11 features: (1)High input impedance; (2)High speed: tf = 1.0μs (Max.)(IC=150A); (3)Low saturation voltage: VCE (sat) = 2.7V (Max.) (IC=150A); (4)Enhancement-mode; (5)The electrodes are isolated from case.

Diagrams

MG150J1BS11 dimension figure