Product Summary
FS100R12KT3 is an IGBT Wechselrichter / IGBT Inverter.
Parametrics
FS100R12KT3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 1200V ; (2)DC-collector current: Tc=80℃, Tvj=150℃, Ic nom=100A; Tc=25℃, Tvj=150℃, Ic nom= 140A; (3)Repetitive Reak Current(tp=1ms): 200A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 480W ; (5)Gate-emitter Peak Voltage: +/-20V.
Features
FS100R12KT3 features: (1)Collector-emitter saturation voltage(IC=100A, VGE=15V, Tvj=25℃): 1.70-2.15V; (2)Gate threshold voltage(IC=4.00mA, VCE=VGE, Tvj=25℃): 5.0-6.5V; (3)Gate charge(VGE=-15V...+15V): 0.90μC; (4)Internal gate resistor(Tvj=25℃): 7.5Ω; (5)Input capacitance(f=1MHz, Tvj=25°C, VCE=25V, VGE=0V): 7.1nF; (6)Collector-emitter cut-off current(VCE=1200 V, VGE=0V, Tvj=25°C): 5.0 mA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FS100R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 140A |
Data Sheet |
|
|
|||||||||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||
FS10-.1 |
Huntington Electric Inc. |
RES .10 OHM 10W 5% SILICONE PCB |
Data Sheet |
|
|
|||||||||||||||||||
FS10-.1-5% |
RES .10 OHM 10W 5% WW RAD |
Data Sheet |
|
|
||||||||||||||||||||
FS10-.5 |
Huntington Electric Inc. |
RES .50 OHM 10W 5% SILICONE PCB |
Data Sheet |
|
|
|||||||||||||||||||
FS10-.5-5% |
RES .50 OHM 10W 5% WW RAD |
Data Sheet |
|
|
||||||||||||||||||||
FS1001-7R |
EURO-CASSETTE 100W 5.1V |
Data Sheet |
|
|
||||||||||||||||||||
FS100KMJ-03 |
Other |
Data Sheet |
Negotiable |
|