Product Summary

The mg600q1us51 is an N channel IGBT. Applications of the mg600q1us51 include: high power switching and motor control applications.

Parametrics

mg600q1us51 absolute maximum ratings: (1) collector-emitter voltage VCES: 1200V; (2) gate-emitter voltage VGES: ±20V; (3) Collector current DC, IC: 600A, 1ms, ICP: 1200A; (4) Forward current, DC, IF: 600A, 1ms 1FM: 1200A; (5) Collector power dissipation (Tc=25°C) PC: 4100W; (6) Junction temperature Tj: 150°C; (7) storage temperature range Tstg: -40 to 125°C; (8) Isolation voltage VIsol: 2500V (AC 1 mintue) .

Features

mg600q1us51 features: (1) high input impedance; (2) high speed: tf=0.3μs (Max.) @Inductive load; (3) low saturation voltage: VCE (sat) =3.6V (Max.) ; (4) enchancement-mode; (5) includes a complete half bridge in one package; (6) the electrodes are isolated from case.

Diagrams

MG600Q1US51 Test Circuit