Product Summary

The MG50J1BS11 is a TOSHIBA GTR Module. It is a High Power Switching Application.

Parametrics

MG50J1BS11 absolute maximum ratings: (1)Collector-Emitter voltage VCES: 600V; (2)Gate-Emitter voltage VGES: ±20V; (3)Collector Current IC: 50A; (4)Collector power dissipation (Tc=25℃) PC: 150W; (5)Junction temperature Tj: 150℃; (6)Storage temperature TSTG: -40℃ to +125℃; (7)Isolation Voltage VIsol: 2500V(AC 1min); (8)Screw Torque: 2/3 N. m.

Features

MG50J1BS11 features: (1)High Input Impedance; (2) High Speed: tf=1.0μs(Max.) (IC=50A); (3)Low Satulation Voltage: VCE (sat)=2.7V(Max.) (IC=50A); (4)Enhancement-Mode; (5)The Electrodes are Isolated from Case.

Diagrams

MG50J1BS11 dimension figure