Product Summary

The MG200Q2YS50 is a TOSHIBA GTR Module. It is a High Power Switching Application.

Parametrics

MG200Q2YS50 absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200V; (2)Gate-emitter voltage VGES: ±20V; (3)Collector Current IC(TC=25℃/80℃): 300/200A; (4)Forward Current IF: 200A; (5)Collector power dissipation PC: 1400W; (6)Junction temperature Tj: 150℃; (7)Storage temperature TSTG: -40℃ to +125℃.

Features

MG200Q2YS50 features: (1)High input impedance; (2)High speed: tf = 0.3μs (Max.) @Inductive Load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max.); (4)Enhancement-mode; (5)Includes a complate half bridge in one ackage; (6)The electrodes are isolated from case.

Diagrams

MG200Q2YS50 dimension figure