Product Summary

The MG100J6ES1 is a TOSHIBA GTR Module. It is a High Power Switching Application.

Parametrics

MG100J6ES1 absolute maximum ratings: (1)Collector-Emitter voltage VCES: 600V; (2)Gate-Emitter voltage VGES: ±20V; (3)Collector Current IC: 100A; (4)Collector power dissipation (Tc=25℃) PC: 300W; (5)Junction temperature Tj: 150℃; (6)Storage temperature TSTG: -40℃ to +125℃; (7)Isolation Voltage VIsol: 2500V(AC 1min); (8)Screw Torque: 30 Kg.cm.

Features

MG100J6ES1 features: (1)The collector is isolated from case; (2)6 IGBTs are Built-in to 1 package; (3) Enhancement-Mode; (4)Low Satulation Voltage: VCE (sat)=4.0V(Max.); (5)High Speed: tf=0.35μs(Max.), trr=0.25μs(Max.).

Diagrams

MG100J6ES1 dimension figure