Product Summary
The ikw40n120t2 is an IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode.
Parametrics
ikw40n120t2 absolute maximum ratings: (1) Collector-emitter voltage VCE: 1200V; (2) DC collector current (Tj=150°C), Tc=25°C: 75A, Tc=110°C: 40A; (3) Pulsed collector current, tp limited by Tjmax, Icpuls: 160A; (4) Turn off safe operating area VCE≤1200V, Tj≤175°C: 160A; (5) DC Diode forward current (Tj=150°C), Tc=25°C, IF: 75A, Tc=110°C: 40A; (6) Diode pulsed current, tp limited by Tjmax, IFpuls: 160A; (7) Gate-emitter voltage VGE: ±20V; (8) Power dissipation Tc=25°C, Ptot: 480W; (9) Operating junction temperature: -40 to +175°C; (10) Storage temperature Tstg: -55 to +150°C; (11) Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only : 260°C.
Features
ikw40n120t2 features: (1) Best in class TO247; (2) Short circuit withstand time: 10μs; (3) TrenchStop 2nd generation for 1200 V applications; (4) Easy paralleling capability due to positive temperature coefficient in VCE (sat) ; (5) Low EMI; (6) Low Gate Charge; (7) Very soft, fast recovery anti-parallel EmCon HE diode; (8) Qualified according to JEDEC for target applications; (9) Pb-free lead plating; RoHS compliant; (10) Complete product spectrum and PSpice Models.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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