(Hong Kong)
Product Summary
FS150R12KE3 is an IGBT Wechselrichter / IGBT Inverter.
Parametrics
FS150R12KE3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 1200V ; (2)DC-collector current: Tc=80℃, Tvj=150℃, Ic nom=150A; Tc=25℃, Tvj=150℃, Ic nom= 200A; (3)Repetitive Reak Current (tp=1ms, Tc=80℃): 300A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 695W ; (5)Gate-emitter Peak Voltage: +/-20V.
Features
FS150R12KE3 features: (1)Collector-emitter saturation voltage (IC=150A, VGE=15V, Tvj=25℃): 1.70-2.15V; (2)Gate threshold voltage(IC=6.00mA, VCE=VGE, Tvj=25℃): 5.0-6.5V; (3)Gate charge (VGE=-15V...+15V): 1.40μC; (4)Internal gate resistor (Tvj=25℃): 1.3Ω; (5)Input capacitance (f=1MHz, Tvj=25°C, VCE=25V, VGE=0V): 10.5nF; (6)Collector-emitter cut-off current (VCE=1200 V, VGE=0V, Tvj=25°C): 5.0 mA.
Diagrams
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 FS150R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 150A FL BRIDGE |
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FS150R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 150A 3-PHASE |
Data Sheet |
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