Product Summary
FP75R12KT3 ia an IGBT Wechselrichter / IGBT Inverter.
Parametrics
FP75R12KT3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 1200V ; (2)DC-collector current: Tc=80℃, Tvj=150℃, Ic nom=75A; Tc=25℃, Tvj=150℃, Ic nom=105A; (3)Repetitive Reak Current(tp=1ms): 150A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 355W ; (5)Gate-emitter Peak Voltage: +/-20V.
Features
FP75R12KT3 features: (1)Collector-emitter saturation voltage(IC=75A, VGE=15V, Tvj=25℃): 1.70-2.15V; (2)Gate threshold voltage(IC=1.00mA, VCE=VGE, Tvj=25℃): 5.0-6.5V; (3)Gate charge(VGE=-15V...+15V): 0.70μC; (4)Internal gate resistor(Tvj=25℃): 10Ω; (5)Input capacitance(f=1MHz, Tvj=25°C, VCE=25V, VGE=0V): 5.3nF; (6)Collector-emitter cut-off current(VCE=1200 V, VGE=0V, Tvj=25°C): 1.0 mA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
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