(Hong Kong)
Product Summary
The FF200R17KE3 is a 62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode.
Parametrics
FF200R17KE3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 1700V ; (2)DC-collector current: Tc=80℃, Tvj=150℃, Ic nom=200A; Tc=25℃, Tvj=150℃, Ic nom=310A; (3)Repetitive Reak Current(tp=1ms): 400A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 1250W ; (5)Gate-emitter Peak Voltage: +/-20V.
Features
FF200R17KE3 features: (1)Collector-emitter saturation voltage(C=200A, VGE=15V, Tvj=25℃): 2.00-2.45V; (2)Gate threshold voltage(IC=8.00mA, VCE=VGE, Tvj=25℃): 5.2-6.4V; (3)Gate charge(VGE=-15V...+15V): 2.30μC; (4)Internal gate resistor(Tvj=25℃): 3.8Ω; (5)Input capacitance(f=1MHz, Tvj=25°C, VCE=25V, VGE=0V): 18.0nF; (6)Collector-emitter cut-off current(VCE=1200 V, VGE=0V, Tvj=25°C): 3.0 mA.
Diagrams
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 FF200R17KE3 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 390A |
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FF200R17KE3_S4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
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