(Hong Kong)
Product Summary
The FF200R12KT3 is a 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode.
Parametrics
FF200R12KT3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 1200V ; (2)DC-collector current: Tc=80℃, Tvj=150℃, Ic nom=200A; Tc=25℃, Tvj=150℃, Ic nom=295A; (3)Repetitive Reak Current(tp=1ms): 400A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 1050W ; (5)Gate-emitter Peak Voltage: +/-20V.
Features
FF200R12KT3 features: (1)Collector-emitter saturation voltage(IC=200A, VGE=15V, Tvj=25℃): 1.70-2.15V; (2)Gate threshold voltage(IC=8.00mA, VCE=VGE, Tvj=25℃): 5.0-6.5V; (3)Gate charge(VGE=-15V...+15V): 1.90μC; (4)Internal gate resistor(Tvj=25℃): 3.8Ω; (5)Input capacitance(f=1MHz, Tvj=25°C, VCE=25V, VGE=0V): 14.0nF; (6)Collector-emitter cut-off current(VCE=1200 V, VGE=0V, Tvj=25°C): 5.0 mA.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FF200R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
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FF200R12KT3_E |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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