Product Summary

The FF200R06ME3 is a EconoDUAL2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC. The applications of the FF200R06ME3 are High Power Conberters, moto driver and UPS systems.

Parametrics

FF200R06ME3 absolute maximum ratings: (1)Collector-emitter Voltage(Tvj=25℃): 600V ; (2)DC-collector current: Tc=80℃, Tvj=175℃, Ic nom=200A; Tc=25℃, Tvj=175℃, Ic nom=260A; (3)Repetitive Reak Current(tp=1ms): 400A; (4)Total Power Dissipation(Tc=25℃, Tvj=150℃): 680W ; (5)Gate-emitter Peak Voltage: +/-20V.

Features

FF200R06ME3 features: (1)Low Switching Losses; (2)VCEsat with positive Temperture Coefficient; (3)Low VCEsat; (4)Package with CTI>200; (5)Isolated Base Plate;(6) Standard Housing.

Diagrams

FF200R06ME3 dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R06ME3
FF200R06ME3

Infineon Technologies

IGBT Modules IGBT 600V 200A

Data Sheet

0-8: $57.00
8-10: $51.60
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R06KE3
FF200R06KE3

Infineon Technologies

IGBT Modules N-CH 600V 260A

Data Sheet

0-6: $64.72
6-10: $58.25
FF200R06ME3
FF200R06ME3

Infineon Technologies

IGBT Modules IGBT 600V 200A

Data Sheet

0-8: $57.00
8-10: $51.60
FF200R06YE3
FF200R06YE3

Infineon Technologies

IGBT Modules IGBT 600V 200A

Data Sheet

0-1: $24.60
1-10: $21.00
FF200R06YE3ENG
FF200R06YE3ENG

Infineon Technologies

IGBT Modules

Data Sheet

0-15: $23.08
FF200R12KE3
FF200R12KE3

Infineon Technologies

IGBT Transistors 1200V 200A DUAL

Data Sheet

0-6: $87.41
6-10: $78.67
FF200R12KE3_B2
FF200R12KE3_B2

Infineon Technologies

IGBT Modules N-CH 1.2KV 295A

Data Sheet

0-6: $85.58
6-10: $77.02