(Hong Kong)
Product Summary
The 2MBI200U4B-120 is a Fuji IGBT Module.
Parametrics
2MBI200U4B-120 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200V; (2)Gate-Emitter Voltage VGES: ±20V; (3)collector current IC: 200A;(4) collector current ICP (1ms): 400A; (5)Collector Power Dissipation Pc: 1040W ; (6)Operating ambient temperature Tj: +150℃; (7)Storage temperature TSTG: -40℃ to +125℃; (8) Isolation Voltage(AC.1min) Visol: 2500V.
Features
2MBI200U4B-120 features: (1)Zero gate voltage collector current ICES: 2.0A max. (Tj=25℃, VGE=0V, VCE=1200V); (2)Gate-emitter leakage current IGES: 400 nA max. (VGE=0V, VCE=±20V); (3)Gate-emitter threshold voltage VGE(th): 6.5V(VGE=20V, IC=200mA); (4)Gate-emitter saturation voltage VCE(sat): 2.10V to 2.25V (VGE=15V, IC=200A, Tj=25℃).
Diagrams
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 2MBI200U4B-120 |
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Data Sheet |
Negotiable |
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2MBI100N-060-03 |
Other |
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Negotiable |
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2MBI100NB-120 |
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Negotiable |
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2MBI100NC-120 |
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Negotiable |
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2MBI100NE-120 |
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Negotiable |
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2MBI100P-140 |
Other |
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Negotiable |
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2MBI100PC-140 |
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Negotiable |
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