(Hong Kong)
Product Summary
The 2MBI1200UG-170 is a Fuji IGBT Module.
Parametrics
2MBI1200UG-170 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1700V; (2)Gate-Emitter Voltage VGES: ±20V; (3)collector current IC: 1200A;(4) collector current ICP (1ms): 2400A; (5)Collector Power Dissipation Pc: 4960W ; (6)Operating ambient temperature Tj: +150℃; (7)Storage temperature TSTG: -40℃ to +125℃; (8) Isolation Voltage(AC.1min) Visol: 3400V.
Features
2MBI1200UG-170 features: (1)Zero gate voltage collector current ICES: 1.0 mA max. (Tj=25℃, VGE=0V, VCE=1700V); (2)Gate-emitter leakage current IGES: 1600 nA max. (VGE=0V, VCE=±20V); (3)Gate-emitter threshold voltage VGE(th): 6.5V(VGE=20V, IC=1200 mA); (4)Gate-emitter saturation voltage VCE(sat): 2.10V to 2.35V to 2.65V (VGE=15V, IC=1200A, Tj=25℃).
Diagrams
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 2MBI1200UG-170 |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Negotiable |
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2MBI100UA-120 |
Other |
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Negotiable |
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2MBI1200UG-170 |
Other |
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Data Sheet |
Negotiable |
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2MBI200UB-120 |
Other |
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Negotiable |
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2MBI200U4H-170 |
Other |
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Negotiable |
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2MBI200U4H-120 |
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Data Sheet |
Negotiable |
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