(Hong Kong)
Product Summary
The IXFH16N120P is a power mosfet. Applications of the IXFH16N120P include: High Voltage Switched-mode and resonant-modepower supplies, High Voltage Pulse Power Applications, High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators, High Voltage DC-DC converters and High Voltage DC-AC inverters.
Parametrics
IXFH16N120P absolute maximum ratings: (1) Tj=25°C to 150°C, VDDS: 1200V; (2) Tj=25°C to 150°C, RGS=1MΩ VDGR: 1200V; (3) Continuous VGSS: ±30V, Transient VGSM: ±40V; (4) Tc=25°C, ID25: 26A, Tc=25°C, pulse width limited by TJM, IDM: 60A; (5) Tc=25°C, IA: 13A, Tc=25°C, EAS: 1.5J; (6) Is≤IDM, VDD≤VDSS, Tj≤150°C, dv/dt: 15V/ns; (7) Tc=25°C, PD: 960W; (8) Tj: -55 to +150°C, TJM: 150°C, Tstg: -55 to +150°C; (9) 1.6 mm (0.062 in.) from case for 10s, Tl: 300°C; (10) Plastic body for 10s TSOLD: 260°C; (11) Mounting torque (IXFK) Md: 1.13/10 Nm/lb.in.
Features
IXFH16N120P features: (1) Fast intrinsic diode; (2) International standard packages; (3) Unclamped Inductive Switching (UIS) rated; (4) Low package inductance: easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH16N120P |
Ixys |
MOSFET 16 Amps 1200V 1 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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Data Sheet |
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Data Sheet |
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Ixys |
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Data Sheet |
Negotiable |
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